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BLS7G3135LS-350P - LDMOS S-band radar power transistor

Download the BLS7G3135LS-350P datasheet PDF. This datasheet also covers the BLS7G3135L-350P variant, as both devices belong to the same ldmos s-band radar power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (3.1 GHz to 3.5 GHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLS7G3135L-350P-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLS7G3135LS-350P LDMOS S-band radar power transistor Ampleon
BLS7G3135LS-200 LDMOS S-band radar power transistor Ampleon
BLS7G3135L-350P LDMOS S-band radar power transistor Ampleon
BLS7G2325L-105 Power LDMOS transistor Ampleon
BLS7G2729L-350P LDMOS S-band radar power transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLS7G3135LS-200 LDMOS S-band radar power transistor
BLS7G3135L-350P LDMOS S-band radar power transistor
BLS7G2325L-105 Power LDMOS transistor
BLS7G2729L-350P LDMOS S-band radar power transistor
BLS7G2729LS-350P LDMOS S-band radar power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 3 — 29 October 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D (V) (W) (dB) (%) tr tf (ns) (ns) pulsed RF 3.1 32 350 12 43 5 5 3.3 32 350 12 43 5 5 3.5 32 350 10 39 5 5 1.2 Features and benefits  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (3.