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BLS7G3135LS-350P - LDMOS S-band radar power transistor

This page provides the datasheet information for the BLS7G3135LS-350P, a member of the BLS7G3135L-350P LDMOS S-band radar power transistor family.

Datasheet Summary

Description

350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit.

Features

  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (3.1 GHz to 3.5 GHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLS7G3135LS-350P

Datasheet Details

Part number BLS7G3135LS-350P
Manufacturer NXP
File Size 147.77 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS7G3135LS-350P Datasheet
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BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 3 — 29 October 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D (V) (W) (dB) (%) tr tf (ns) (ns) pulsed RF 3.1 32 350 12 43 5 5 3.3 32 350 12 43 5 5 3.5 32 350 10 39 5 5 1.2 Features and benefits  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (3.
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