BLS7G3135LS-350P
BLS7G3135LS-350P is LDMOS S-band radar power transistor manufactured by NXP Semiconductors.
- Part of the BLS7G3135L-350P comparator family.
- Part of the BLS7G3135L-350P comparator family.
description
350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 m A; in a class-AB production test circuit.
Test signal f (GHz)
Gp
D
(V)
(W) (d B)
(%) tr tf (ns) (ns) pulsed RF
32 350 12 43 5
32 350 12 43 5
32 350 10 39 5
1.2 Features and benefits
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (3.1 GHz to 3.5 GHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range
NXP Semiconductors
BLS7G3135L(S)-350P
LDMOS S-band radar power transistor
2. Pinning information
Table 2. Pinning Pin Description
BLS7G3135L-350P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLS7G3135LS-350P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5...
