BLS8G2731L-400P
Key Features
- High efficiency
- Excellent ruggedness
- Designed for S-band operation
- Excellent thermal stability
- Easy power control
- Integrated dual sided ESD protection enables excellent off-state isolation
- High flexibility with respect to pulse formats
- Internally matched for ease of use
- compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications
- S-band radar applications in the frequent range 2.7 GHz to 3.1 GHz NXP Semiconductors BLS8G2731L(S)-400P LDMOS S-band radar power transistor
