BLU6H0410L-600P
BLU6H0410L-600P is Power LDMOS transistor manufactured by NXP Semiconductors.
description
A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.
Table 1. Application information
Typical RF performance at VDS = 50 V; in a mon source 860 MHz narrowband test circuit; unless otherwise specified.
Test signal f
IDq
PL(AV)
PL(M)
Gp
D IMD3
(MHz) (m A) (W)
(W) (d B) (%) (d Bc) pulsed, class-AB [1]
860 1.3
- 600 20 58
- [1] Measured at = 10 %; tp = 1 ms.
1.2 Features and benefits
- Excellent ruggedness (VSWR 40 : 1 through all phases)
- Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
- High power gain
- High efficiency
- Internal input matching for high gain and optimum broadband operation
- Excellent reliability
- Easy power control
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz frequency range
NXP Semiconductors
BLU6H0410L(S)-600P
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLU6H0410L-600P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLU6H0410LS-600P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic...
