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BLU6H0410L-600P Datasheet

Manufacturer: NXP Semiconductors
BLU6H0410L-600P datasheet preview

Datasheet Details

Part number BLU6H0410L-600P
Datasheet BLU6H0410L-600P-NXP.pdf
File Size 214.66 KB
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
BLU6H0410L-600P page 2 BLU6H0410L-600P page 3

BLU6H0410L-600P Overview

A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz. Application information Typical RF performance at VDS = 50 V; in a mon source 860 MHz narrowband test circuit;.

BLU6H0410L-600P Key Features

  • Excellent ruggedness (VSWR  40 : 1 through all phases)
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
  • High power gain
  • High efficiency
  • Internal input matching for high gain and optimum broadband operation
  • Excellent reliability
  • Easy power control
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLU6H0410L-600P from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLU6H0410L-600P Power LDMOS transistor Ampleon
NXP Semiconductors logo - Manufacturer

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BLU6H0410L-600P Distributor

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