BLU6H0410LS-600P - Power LDMOS transistor

This page provides the datasheet information for the BLU6H0410LS-600P, a member of the BLU6H0410L-600P Power LDMOS transistor family.

Product Overview

NXP

Part number	BLU6H0410LS-600P
Manufacturer	NXP
File Size	214.66 KB
Description	Power LDMOS transistor
Datasheet	BLU6H0410LS-600P Datasheet
Additional preview pages of the BLU6H0410LS-600P datasheet.

A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.

Table 1.

Typical RF performance at VDS = 50 V; in a common source 860 MHz narrowband test circuit; unless otherwise specified.

Excellent ruggedness (VSWR  40 : 1 through all phases).
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Published: Mar 7, 2016 |