BLU99 Datasheet | NXP Semiconductors

DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES - multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile; - gold metallization ensures excellent reliability. The BLU99 has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. The BLU99/SL is a studless version (SOT122D). QUICK REFERENCE DATA R.F. performance at Th = 25 °C in a mon-emitter class-B circuit. MODE OF OPERATION narrow band; c.w. VCE V 12,5 12,5 f MHz 470 900 PL W 5 4 > typ. Gp d B BLU99 BLU99/SL ηC % 10,5 > 7,0 typ. 60 60 PIN CONFIGURATION PINNING - SOT122A; SOT122D PIN fpage DESCRIPTION collector emitter base emitter 1 2 3 4 age 4 1 3 1 3 2 Top view MBK187 MSB055 Fig.1 Simplified outline. SOT122A (BLU99). Fig.2 Simplified outline. SOT122D (BLU99/SL). PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. March 1993 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average peak value; f > 1 MHz D.C. power dissipation up to Tmb = 50 °C R.F. power dissipation f > 1 MHz; Tmb = 25 °C Storage temperature Operating junction temperature Ptot (r.f.) Tstg Tj max. max. 19 W 200 °C - 65 to + 150 °C IC;IC(AV) ICM Ptot (d.c.) max. max. max. 0,8 A 2,5 A 12,5 W VCBO VCEO VEBO max. max. max. 36 V 16 V 3 V BLU99 BLU99/SL handbook, halfpage MDA372 Tmb = 50 °C Th = 70 °C handbook, halfpage MDA373 Ptot IC (A) 20 II (W) III 10- 1 4 1 10 VCE (V) 102 0 20 40 60 80 100 Th (°C) Rth mb-h = 0,6...