BLV59 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV59 UHF linear power transistor Product specification Supersedes data of March 1993 1998 Jan 09 Philips Semiconductors Product specification UHF linear power transistor Features - Internal input matching to achieve an optimum wideband capability and high power gain - Emitter-ballasting resistors for lower junction temperatures - Titanium-platinum-gold metallization ensures long life and excellent reliability. APPLICATIONS - UHF linear amplifiers in television transmitters. DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap. All leads are isolated from the flange. 1 Top view 3 5 MAM141 PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e DESCRIPTION emitter emitter base collector emitter emitter handbook, halfpage 6 c b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter class-AB circuit. MODE OF OPERATION CW, class-AB f (MHz) 860 VCE (V) 25 PL (W) 30 Gp (d B) >7 ηC (%) >50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1998 Jan 09 Philips Semiconductors Product specification UHF linear power transistor LIMITING VALUES In accordance with the...