BLV59 Description
NPN silicon planar epitaxial power transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter class-AB circuit.
BLV59 Key Features
- Internal input matching to achieve an optimum wideband capability and high power gain
- Emitter-ballasting resistors for lower junction temperatures
- Titanium-platinum-gold metallization ensures long life and excellent reliability