BLV861 Description
NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap. note 1 base 1 base 2 mon emitters;.
BLV861 Key Features
- Double stage internal input and output matching networks for an optimum wideband capability and high gain
- Polysilicon emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability