BLV897 - UHF push-pull power transistor

Product Overview

NXP

BLV897 UHF push-pull power transistor by NXP - Datasheet Preview — Datasheet preview – BLV897

Datasheet Details

Part number	BLV897
Manufacturer	NXP
File Size	101.37 KB
Description	UHF push-pull power transistor
Datasheet	BLV897 Datasheet
Additional preview pages of the BLV897 datasheet.

Product details

Description

collector 1 collector 2 base 1 base 2 common emitters connected to flange c1 2 b1 e 5 b2 DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration.The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap.The common emitters are connected to the flange.1 3 Top view 4 c2 MAM217 Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit.MODE OF OPERATION

Features

Internal input matching for an optimum wideband capability and high gain.
Polysilicon emitter ballasting resistors for an optimum temperature profile.
Gold metallization ensures excellent reliability.

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Published: Mar 23, 2005 |