BLV897 Overview
collector 1 collector 2 base 1 base 2 mon emitters connected to flange c1 2 b1 e 5 b2 DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The mon emitters are connected to the flange.
BLV897 Key Features
- Internal input matching for an optimum wideband capability and high gain
- Polysilicon emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability
BLV897 Applications
- mon emitter class-AB operation in base stations in the 800 to 960 MHz frequency band