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BLV897 - UHF push-pull power transistor

General Description

DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration.

The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap.

Key Features

  • Internal input matching for an optimum wideband capability and high gain.
  • Polysilicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power transistor FEATURES • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band.