BLV897 Overview
Description
NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap.
Key Features
- Internal input matching for an optimum wideband capability and high gain
- Polysilicon emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability. APPLICATIONS
- Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band. handbook, halfpage BLV897 PINNING
