BLV920 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV920 UHF power transistor Product specification Supersedes data of 1995 Apr 10 1997 Nov 17 Philips Semiconductors Product specification UHF power transistor Features - Internal input matching to achieve high power gain and easy design of wideband circuits - Emitter ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability. APPLICATIONS - Base station transmitters in the 820 to 960 MHz range. handbook, halfpage DESCRIPTION NPN silicon planar epitaxial transistor intended for mon emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a...