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BLV920 - UHF power transistor

General Description

NPN silicon planar epitaxial transistor intended for common emitter class-AB operation.

The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap.

All leads are isolated from the flange.

Key Features

  • Internal input matching to achieve high power gain and easy design of wideband circuits.
  • Emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV920 UHF power transistor Product specification Supersedes data of 1995 Apr 10 1997 Nov 17 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal input matching to achieve high power gain and easy design of wideband circuits • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Base station transmitters in the 820 to 960 MHz range. handbook, halfpage BLV920 DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange.