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BLV946 - UHF power transistor

Description

NPN silicon planar transistor intended for common emitter class-AB operation.

The transistor has internal input and output matching by means of MOS capacitors.

Features

  • Internal input and output matching for easy matching, high gain and efficiency.
  • Poly-silicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV946 UHF power transistor Product specification Supersedes data of 1995 Jun 29 1997 Oct 30 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal input and output matching for easy matching, high gain and efficiency • Poly-silicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Base stations in the 850 to 960 MHz frequency range. DESCRIPTION handbook, halfpage BLV946 PINNING - SOT273A PIN 1 2 3 4 5 6 emitter emitter collector base emitter emitter DESCRIPTION 2 4 6 NPN silicon planar transistor intended for common emitter class-AB operation. The transistor has internal input and output matching by means of MOS capacitors.
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