BLV950 Description
Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear mon emitter class-AB operation. The transistors are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps. The flange provides the mon emitter connection for both transistors.
BLV950 Key Features
- Internal input and output matching for easy matching, high gain and efficiency
- Poly-silicon emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability