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BLV950 - UHF push-pull power transistor

Description

Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter class-AB operation.

The transistors are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps.

The flange provides the common emitter connection for both transistors.

Features

  • Internal input and output matching for easy matching, high gain and efficiency.
  • Poly-silicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Datasheet Details

Part number BLV950
Manufacturer NXP
File Size 109.22 KB
Description UHF push-pull power transistor
Datasheet download datasheet BLV950 Datasheet
Additional preview pages of the BLV950 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification Supersedes data of 1996 Jan 26 1997 Oct 27 Philips Semiconductors Product specification UHF push-pull power transistor FEATURES • Internal input and output matching for easy matching, high gain and efficiency • Poly-silicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Base station transmitters in the 800 to 960 MHz range. DESCRIPTION Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter class-AB operation. The transistors are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps.
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