Datasheet4U Logo Datasheet4U.com

BLW29 - VHF power transistor

General Description

N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V.

Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f.

Key Features

  • s given, it is a.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLW31 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW34 NPN SILICON RF POWER TRANSISTOR ASI
BLW75 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW81 UHF power transistor ELEFLOW TECHNOLOGIES
BLW81 NPN SILICON RF POWER TRANSISTOR ASI

Other Datasheets by NXP Semiconductors

Part Number Description
BLW30 VHF power transistor
BLW32 UHF linear power transistor
BLW33 UHF linear power transistor
BLW34 UHF linear power transistor
BLW50F HF/VHF power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BLW29 VHF power transistor Product speciļ¬cation August 1986 Philips Semiconductors Product speciļ¬cation VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage, the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" capstan envelope with a ceramic cap.