BLW29 Description
N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. Together with a BFQ42 driver stage, the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz.