BLW81 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLW81 UHF power transistor Product specification March 1993 Philips Semiconductors UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. Product specification QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized mon-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W Gp d B η % c.w. 12,5 470 10 > 6,0 > 60 c.w. 12,5 175 10 typ. 13,5 typ. 60 zi Ω 1,3 + j2,5 1,2 - j0,6 YL m S - j66 140 - j80 PIN CONFIGURATION handbook, halfpage 4 1 PINNING - SOT122A. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter Top view MBK187 Fig.1 Simplified outline....