BLW898 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 16 Philips Semiconductors Product specification UHF linear power transistor Features - Internal input matching for wideband operation and high power gain - Polysilicon emitter ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability. APPLICATION - mon emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor in a SOT171A 6-lead rectangular flange package, with a ceramic cap. The transistor delivers a Po sync = 3 W in class-A operation at 860 MHz and a supply voltage of 25 V. PINNING SOT171A PIN 1 2 3 4 5 6 emitter emitter base collector emitter emitter DESCRIPTION handbook, halfpage 2 4 6 c b 1 3 5 Top view MAM141 e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter test circuit. MODE OF OPERATION CW class-A Note 1. Three-tone test signal (- 8, - 16, and - 10 d B); dim = - 63 d B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. f (MHz) 860 VCE (V) 25 ICQ (A) 1.1 Po sync (W) ≥3(1) Gp (d B) ≥9(1) 1996 Jul 16 Philips Semiconductors Product specification UHF linear power transistor LIMITING VALUES In accordance with the...