BSD22
DESCRIPTION
Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type.The transistor is sealed in a SOT143 envelope and features a low ON-resistance and low capacitances.The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. Applications:
- analog and/or digital switch
- switch driver
- convertor
- chopper PINNING 1 2 3 4 = substrate (b) = source = drain = gate Fig.1 Simplified outline and symbol.
1 Top view 2
MAM389
Marking code: M32 handbook, halfpage
3 d b g s
Note 1. Drain and source are interchangeable
QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Junction temperature Drain-source ON-resistance VGS = 10 V; VSB = 0; ID = 1 m A Feed-back capacitance VGS = VBS =
- 5 V; VDS = 10 V; f = 1 MHz Crss typ. 0.6 p F RDSon max. 30 Ω VDS VGS ID Ptot Tj max. max. max. max. max. 20 + 15
- 40 50...
