BSH103 Description
handbook, halfpage 3 d g s DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETERS drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS ; ID = 1 mA Ts = 80 °C VGS = 2.5.
BSH103 Key Features
- Very low threshold
- High-speed switching
- No secondary breakdown
- Direct interface to C-MOS, TTL etc