BSH103 Datasheet | NXP Semiconductors

FEATURES - Very low threshold - High-speed switching - No secondary breakdown - Direct interface to C-MOS, TTL etc. APPLICATIONS - Power management - DC to DC converters - Battery powered applications - ‘Glue-logic’; interface between logic blocks and/or periphery - General purpose switch. 1 Top view 2 MAM273 PINNING - SOT23 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION handbook, halfpage 3 d g s DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETERS drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS ; ID = 1 m A Ts = 80 °C VGS = 2.5 V; ID = 0.5 A Ts = 80 °C CAUTION VGD = 0; IS = 0.5 A CONDITIONS - - - 0.4 - - - MIN. Fig.1 Simplified outline and symbol. MAX. 30 1 ±8 - 0.85 0.5 0.5 V V V V A Ω W UNIT This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1998 Feb 11 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID IDM Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation Ts = 80 °C; note 1 note 2 Ts = 80 °C Tamb = 25 °C; note 3 Tamb = 25 °C; note 4 Tstg Tj IS ISM Notes 1. Ts is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. storage temperature operating...