BSP122 - N-channel enhancement mode vertical D-MOS transistor

NXP Semiconductors

General Description

N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

Key Features

Direct interface to C-MOS, TTL, etc.
High-speed switching.
No secondary breakdown.

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BSP122 n-channel enhancement mode vertical d-mos transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BSP122
Manufacturer	NXP Semiconductors
File Size	58.57 KB
Description	N-channel enhancement mode vertical D-MOS transistor
Datasheet	BSP122 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speciﬁcation N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline (SOT223) and symbol.