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BSP122 Datasheet N-channel Enhancement Mode Vertical D-mos Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification.

General Description

N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline (SOT223) and symbol.

DESCRIPTION QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage BSP122 MAX.

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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