NXP Semiconductors BSP220
P-channel enhancement mode vertical D-MOS transistor
| Part No. | BSP220 |
|---|---|
| Datasheet | BSP220 Download |
| Manufacturer |  NXP Semiconductors |
| Description | P-channel enhancement mode vertical D-MOS transistor |
| Buy | Stock & Price |
FEATURES
● Low RDS(on)● Direct interface to C-MOS, TTL, etc.
● High-speed switching
● No secondary breakdown.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM121 BSP220 QUICK REFERENCE DATA SYMBOL −VDS −ID RDS(on) −VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value −ID = 200 mA −VGS = 10 V CONDITIONS MAX. UNIT 200 225 12 2.8 V mA Ω V PIN CONFIGURATION handbook, halfpage 4 dDESCRIPTION
g s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL −VDS ±VGSO −ID −IDM Ptot Tstg Tj Note PARAMETER drain-source voltage gate-source voltage drain current drain current to...
