BSP220 Description
P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. UNIT 200 225 12 2.8 V mA Ω V handbook, halfpage 4 d DESCRIPTION g s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the System...
BSP220 Key Features
- Low RDS(on)
- Direct interface to C-MOS, TTL, etc
- High-speed switching
- No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope
- SOT223 PIN 1 2 3 4 gate drain source drain