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BSS123 - N-channel transistor Logic level FET

General Description

technology.

Relay driver High-speed line driver

The BSS123 is supplied in the SOT23 subminiature surface mounting package.

Key Features

  • ’Trench’ technology.
  • Extremely fast switching.
  • Logic level compatible.
  • Subminiature surface mounting package SYMBOL g d s QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors N-channel TrenchMOS transistor Logic level FET Product specification BSS123 FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package SYMBOL g d s QUICK REFERENCE DATA VDSS = 100 V ID = 150 mA RDS(ON) ≤ 6 Ω (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Relay driver • High-speed line driver • Telephone ringer The BSS123 is supplied in the SOT23 subminiature surface mounting package.