Datasheet4U Logo Datasheet4U.com

BSS123 Datasheet N-channel Transistor Logic Level Fet

Manufacturer: NXP Semiconductors

Overview: Philips Semiconductors N-channel TrenchMOS transistor Logic level FET Product.

General Description

N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.

Applications:• Relay driver • High-speed line driver • Telephone ringer The BSS123 is supplied in the SOT23 subminiature surface mounting package.

PINNING PIN DESCRIPTION 1 gate 2 source 3 drain SOT23 3 Top view 12 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C;

Key Features

  • ’Trench’ technology.
  • Extremely fast switching.
  • Logic level compatible.
  • Subminiature surface mounting package SYMBOL g d s QUICK.

BSS123 Distributor