BSS123
Description
N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.
Key Features
- Extremely fast switching
- Subminiature surface mounting package SYMBOL g d s QUICK REFERENCE DATA VDSS = 100 V ID = 150 mA RDS(ON) ≤ 6 Ω (VGS = 10 V)
Applications
- Relay driver
