Datasheet Details
| Part number | BSS123 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 17.30 KB |
| Description | N-channel transistor Logic level FET |
| Datasheet | BSS123_PhilipsSemiconductors.pdf |
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Overview: Philips Semiconductors N-channel TrenchMOS transistor Logic level FET Product.
| Part number | BSS123 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 17.30 KB |
| Description | N-channel transistor Logic level FET |
| Datasheet | BSS123_PhilipsSemiconductors.pdf |
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N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.
Applications:• Relay driver • High-speed line driver • Telephone ringer The BSS123 is supplied in the SOT23 subminiature surface mounting package.
PINNING PIN DESCRIPTION 1 gate 2 source 3 drain SOT23 3 Top view 12 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BSS123 | N-Channel MOSFET | JCET |
| BSS123 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild Semiconductor | |
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BSS123 | N-CHANNEL POWER MOSFET | UTC |
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BSS123 | 100V N-Channel Enhancement Mode MOSFE | PAN JIT |
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BSS123 | N-Channel 100V MOSFET | LITE-ON |
| Part Number | Description |
|---|---|
| BSS110 | P-channel enhancement mode vertical D-MOS transistor |
| BSS138AKA | single N-channel MOSFET |
| BSS138BK | N-channel MOSFET |
| BSS138BKW | 320mA N-channel Trench MOSFET |
| BSS192 | P-channel enhancement mode vertical D-MOS transistor |
| BSS50 | NPN Darlington transistors |
| BSS51 | NPN Darlington transistors |
| BSS52 | NPN Darlington transistors |
| BSS61 | PNP transistors |
| BSS62 | PNP transistors |