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BSS192 Datasheet P-channel Enhancement Mode Vertical D-mos Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of July 1993 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips.

General Description

P-channel enhancement mode vertical D-MOS transistor in a SOT89 package.

1 Bottom view Marking code: KB 2 3 MAM354 BSS192 PINNING - SOT89 PIN 1 2 3 SYMBOL s d g drain gate DESCRIPTION source handbook, halfpage d g s Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA SYMBOL VDS VGSth ID RDSon PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance ID = −100 mA;

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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