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BSS192 - P-channel enhancement mode vertical D-MOS transistor

General Description

P-channel enhancement mode vertical D-MOS transistor in a SOT89 package.

Fig.1 Simplified outline and symbol.

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of July 1993 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high-speed and line transformer drivers. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT89 package. 1 Bottom view Marking code: KB 2 3 MAM354 BSS192 PINNING - SOT89 PIN 1 2 3 SYMBOL s d g drain gate DESCRIPTION source handbook, halfpage d g s Fig.1 Simplified outline and symbol.