NXP Semiconductors BSS92
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BSS92 |
|---|---|
| Datasheet | BSS92 Download |
| Manufacturer |  NXP Semiconductors |
| Description | P-channel transistor |
| Buy | Stock & Price |
FEATURES
● Direct interface to C-MOS, TTL, etc.● High-speed switching
● No secondary breakdown.
APPLICATIONS
● Line current interrupter in telephony applications● Relay, high speed and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor in a TO-92 (SOT54) variant package. handbook, halfpage BSS92 PINNING - TO-92 (SOT54) variant PIN 1 2 3 SYMBOL g d sDESCRIPTION
gate drain source d 1 2 3 g MAM144 s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSO ID RDSon Ptot yfs PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) drain-source on-state resistance total power dissipation forward transfer admittance ID = −100 mA; VGS = −10 V Tamb ≤ 25 °C VDS = −25 V; ID = −100 mA open drain CONDITIONS MIN. − − − − − 60 TYP. − − − 10 − 200 MAX. −240 ±20 −150 20 1 − V V mA Ω W mS UNIT 1997 Jun 19 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
