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BSW68A - NPN transistors

General Description

1 handbook, halfpage 2 3 2 DESCRIPTION NPN transistor in a TO-39 metal package.

3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol.

QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSW66A BSW67A BSW68A VCEO collector-emitter voltage BSW66A BSW67A BSW68A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tcase ≤ 25 °C IC = 10 mA;

Overview

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips.

Key Features

  • High current (max. 1 A).
  • High voltage (max. 150 V).