Datasheet4U.com

BT134W-600E Datasheet PDF

NXP Semiconductors BT134W-600E

The rate of rise of current should not exceed 3 A/µs.
Part No. BT134W-600E
Datasheet BT134W-600E Download
Manufacturer
NXP Semiconductors
Description Triacs sensitive gate
Buy Stock & Price
BT134W-600E datasheet page 1 preview

GENERAL DESCRIPTION

Glass passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT134W series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT134WRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. UNIT 500E 500 1 10 600E 600 1 10 V A A PINNING - SOT223 PIN 1 2 3 tab

DESCRIPTION

main terminal 1 PIN CONFIGURATION 4 SYMBOL T2 main terminal 2 gate main terminal 2 1 2 3 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tsp ≤ 108 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 1...
BT134W-600E page 2 preview BT134W-600E page 3 preview