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BT137-600E Datasheet PDF

NXP Semiconductors BT137-600E

The rate of rise of current should not exceed 6 A/µs.
Part No. BT137-600E
Datasheet BT137-600E Download
Manufacturer
NXP Semiconductors
Description 4Q Triac
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BT137-600E datasheet page 1 preview

GENERAL DESCRIPTION

Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT137 series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 500 8 65 600E 600 8 65 800E 800 8 65 V A A PINNING - TO220AB PIN 1 2 3 tab

DESCRIPTION

main terminal 1 PIN CONFIGURATION tab SYMBOL T2 main terminal 2 gate main terminal 2 1 23 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t =...
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