BT137B-800G Datasheet | NXP Semiconductors

DESCRIPTION Glass passivated triacs in a plastic envelope suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER BT137BBT137BBT137BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500F 500G 500 8 65 600 600F 600G 600 8 65 800 800F 800G 800 8 65 VDRM IT(RMS) ITSM PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2 PIN CONFIGURATION mb SYMBOL T2 2 1 3 T1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; d IG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t d IT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not remended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. October 1997 1 Rev 1.200 Philips Semiconductors Product specification Triacs BT137B series THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 55 MAX. 2.0 2.4 UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle...