NXP Semiconductors BT151
The rate of rise of current should not exceed 15 A/µs.FEATURES
I High thermal cycling performance I High bidirectional blocking voltage 1.3APPLICATIONS
I Motor control I Ignition circuits I Static switching I Protection circuits 1.4 Quick reference data I VDRM ≤ 500 V (BT151-500L/R) I VRRM ≤ 500 V (BT151-500L/R) I VDRM ≤ 650 V (BT151-650L/R) I VRRM ≤ 650 V (BT151-650L/R) I VDRM ≤ 800 V (BT151-800R) I VRRM ≤ 800 V (BT151-800R) I ITSM ≤ 120 A (t = 10 ms) I IT(RMS) ≤ 12 A I IT(AV) ≤ 7.5 A I IGT ≤ 5 mA (BT151 series L) I IGT ≤ 15 mA (BT151 series R) 2. Pinning information Table 1. Pin 1 2 3 mb PinningDESCRIPTION
cathode (K) anode (A) gate (G) mounting base; connected to anode Simplified outline mb Symbol AK G sym037 123 SOT78 (3-lead TO-220AB) NXP Semiconductors BT151 series L and R Thyristors 3. Ordering information Table 2. Ordering information Type number Package NameDESCRIPTION
BT151-500L BT151-500R SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB BT151-650L BT151-650R BT151-800R 4. Limiting values Version SOT78 Table 3.