BT151F-800 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Thyristors BT151F series GENERAL DESCRIPTION Glass passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT151FRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500 5.7 9 100 650 650 5.7 9 100 800 800 5.7 9 100 V A A A PINNING - SOT186 PIN 1 2 3 DESCRIPTION cathode anode gate PIN CONFIGURATION case SYMBOL a k case isolated 1 2 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Ths ≤ 87 ˚C all conduction angles half sine wave; Tj = 125 ˚C prior to surge; with reapplied VDRM(max) t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 m A; d IG/dt = 50 m A/µs -40 -500 5001 MAX. -650 6501 5.7 9 100 110 50 50 2 5 5 5 0.5 150 125 -800 800 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t d IT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not remended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. February 1996 1 Rev 1.100 Philips Semiconductors Product specification Thyristors BT151F series ISOLATION LIMITING VALUE &...