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BT151S-500R Datasheet PDF

NXP Semiconductors BT151S-500R

The rate of rise of current should not exceed 15 A/µs.
Part No. BT151S-500R
Datasheet BT151S-500R Download
Manufacturer
NXP Semiconductors
Description Thyristors
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BT151S-500R datasheet page 1 preview

GENERAL DESCRIPTION

Glass passivated thyristors in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT151S (or BT151M)Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 7.5 12 100 650R 650 7.5 12 100 800R 800 7.5 12 100 V A A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab cathode anode gate anode gate anode cathode anode PIN CONFIGURATION tab SYMBOL a k 2 1 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb ≤ 103 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge...
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