NXP Semiconductors BTA2008
The rate of rise of current should not exceed 6 A/µs.FEATURES
I Guaranteed commutation performance I Easily interfaced with low power drivers at each gate sensitivity including microcontrollers I Sensitive gate 1.3APPLICATIONS
I Motor control I Solenoid drivers 1.4 Quick reference data I VDRM ≤ 600 V (BTA2008-600D) I VDRM ≤ 600 V (BTA2008-600E) I VDRM ≤ 800 V (BTA2008-800D) I VDRM ≤ 800 V (BTA2008-800E) I ITSM ≤ 9 A (t = 20 ms) I IGT ≤ 5 mA (BTA2008-600D) I IGT ≤ 5 mA (BTA2008-800D) I IGT ≤ 10 mA (BTA2008-600E) I IGT ≤ 10 mA (BTA2008-800E) I IT(RMS) ≤ 0.8 A 2. Pinning information Table 1. Pin 1 2 3 PinningDESCRIPTION
main terminal 2 (T2) gate (G) main terminal 1 (T1) Simplified outline Graphic symbol T2 sym051 T1 G 321 SOT54 (TO-92) NXP Semiconductors BTA2008 series D and E 0.8 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number Package NameDESCRIPTION
BTA2008-600D TO-92 plastic single-ended leaded (through hole) package; 3 leads BTA2008-600E BTA2008-800D BTA2008-800E 4. Limiting values Version SOT54 Table 3.