BTA212
BTA212 is Three quadrant triacs manufactured by NXP Semiconductors.
DESCRIPTION
Glass passivated high mutation triacs in a plastic envelope intended for use in circuits where high static and dynamic d V/dt and high d I/dt can occur. These devices will mutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA212 series C
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA212Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500C 500 12 95 600C 600 12 95 800C 800 12 95 V A A
PINNING
- TO220AB
PIN 1 2 3 tab DESCRIPTION main terminal 1
PIN CONFIGURATION tab
SYMBOL
T2 main terminal 2 gate main terminal 2
1 23
T1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; d IG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 12 -800 800 UNIT V A
I2t d IT/dt IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
- 95 105 45 100 2 5 5 0.5 150 125
A A A2s A/µs A V W W ˚C ˚C over any 20 ms period
-40
- 1 Although not remended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. October 1997 1 Rev 1.000
Philips Semiconductors
Preliminary specification
Three quadrant triacs high mutation
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN.
- BTA212 series C
TYP. 60
MAX. 1.5 2.0
- UNIT K/W K/W...
