BTA216-800B Datasheet | NXP Semiconductors

DESCRIPTION Glass passivated high mutation triacs in a plastic envelope intended for use in circuits where high static and dynamic d V/dt and high d I/dt can occur. These devices will mutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA216 series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA216Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500B 500 16 140 600B 600 16 140 800B 800 16 140 V A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION main terminal 1 PIN CONFIGURATION tab SYMBOL T2 main terminal 2 gate main terminal 2 1 23 T1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; d IG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A I2t d IT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 140 150 98 100 2 5 5 0.5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not remended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. October 1997 1 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high mutation THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. - BTA216 series B TYP. 60 MAX. 1.2 1.7 - UNIT K/W K/W...