BTA216B-800B Datasheet | NXP Semiconductors

DESCRIPTION Glass passivated high mutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic d V/dt and high d I/dt can occur. These devices will mutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. MAX. UNIT VDRM IT(RMS) ITSM BTA216B- 500B 600B 800B Repetitive peak off-state 500 600 800 V voltages RMS on-state current 16 16 16 A Non-repetitive peak on-state 140 140 140 A current PINNING - SOT404 DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate mb main terminal 2 PIN CONFIGURATION mb D2PAK (SOT404) SYMBOL T2 T1 G sym051 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM...