BTA225B-500B Datasheet | NXP Semiconductors

DESCRIPTION Glass passivated high mutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic d V/dt and high d I/dt can occur. These devices will mutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA225B series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA225BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500B 500 25 180 600B 600 25 180 800B 800 25 180 V A A PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2 PIN CONFIGURATION mb SYMBOL T2 2 1 3 T1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; d IG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 25 -800 800 UNIT V A - I2t d IT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature 190 209 180 100 2 5 5 0.5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not remended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Three quadrant triacs high mutation THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS BTA225B series B MIN. - TYP. 55 MAX. 1.0...