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BTA312Y-600C

Manufacturer: NXP Semiconductors

BTA312Y-600C datasheet by NXP Semiconductors.

BTA312Y-600C datasheet preview

BTA312Y-600C Datasheet Details

Part number BTA312Y-600C
Datasheet BTA312Y-600C-NXP.pdf
File Size 211.97 KB
Manufacturer NXP Semiconductors
Description 3Q Hi-Com Triac
BTA312Y-600C page 2 BTA312Y-600C page 3

BTA312Y-600C Overview

Planar passivated high mutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will mutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has an internally isolated mounting base.

BTA312Y-600C Key Features

  • 3Q technology for improved noise immunity
  • High mutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • Isolated mounting base with 2500 V (RMS) isolation
  • Less sensitive gate for high noise immunity
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only

BTA312Y-600C from other manufacturers

View BTA312Y-600C datasheet index

Brand Logo Part Number Description Other Manufacturers
WeEn Logo BTA312Y-600C 3Q Hi-Com Triac WeEn
NXP Semiconductors logo - Manufacturer

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BTA312Y-600C Distributor

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