BTA412Y Datasheet | NXP Semiconductors

ription Passivated, new generation, high mutation triacs in an internally insulated TO-220 plastic package. 1.2 Features I Very high mutation performance I Isolated mounting base I High operating junction temperature I High immunity to d V/dt I 2500 V RMS isolation voltage 1.3 Applications I Heating and cooking appliances I High power motor control e.g. vacuum cleaners I Solid state relays I Non-linear rectifier-fed motor loads I Electronic thermostats for heating and cooling loads 1.4 Quick reference data I VDRM ≤ 600 V (BTA412Y-600B/C) I VDRM ≤ 800 V (BTA412Y-800B/C) I IT(RMS) ≤ 12 A I IGT ≤ 50 m A (BTA412Y series B) I IGT ≤ 35 m A (BTA412Y series C) I ITSM ≤ 140 A (t = 20 ms) Free Datasheet http://.. NXP Semiconductors BTA412Y series B and C 12 A 3-quadrant triacs, insulated, high mutation, high temperature 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base; isolated mb T2 sym051 Simplified outline Graphic symbol T1 G 1 2 3 SOT78D (TO-220) 3. Ordering information Table 2. Ordering information Package Name BTA412Y-600B BTA412Y-600C BTA412Y-800B BTA412Y-800C TO-220 Description Version plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT78D 3-lead TO-220 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM IT(RMS) ITSM Parameter repetitive peak off-state voltage RMS on-state current non-repetitive peak on-state current Conditions BTA412Y-600B; BTA412Y-600C BTA412Y-800B; BTA412Y-800C full sine wave; Tmb ≤ 116 °C; see Figure 4 and 5 full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms I2t d IT/dt IGM PGM I2t for fusing tp = 10 ms ITM = 20 A; IG = 0.2 A; d IG/dt = 0.2 A/µs rate of rise of on-state current peak gate current peak gate power 140 153 98 100 4 5 A A A2s A/µs A W [1] Min - Max 600 800 12 Unit V V A BTA412Y_SER_B_C_2 © NXP B.V. 2008....