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BTA416Y-600C

Manufacturer: NXP Semiconductors

BTA416Y-600C datasheet by NXP Semiconductors.

BTA416Y-600C datasheet preview

BTA416Y-600C Datasheet Details

Part number BTA416Y-600C
Datasheet BTA416Y-600C-NXP.pdf
File Size 166.14 KB
Manufacturer NXP Semiconductors
Description 3Q Hi-Com Triac
BTA416Y-600C page 2 BTA416Y-600C page 3

BTA416Y-600C Overview

Planar passivated high mutation three quadrant triac in a SOT78D (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will mutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high junction temperature operating capability and an internally isolated mounting base.

BTA416Y-600C Key Features

  • 2500 V RMS isolation voltage capability
  • 3Q technology for improved noise immunity
  • High mutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High junction temperature operating capability
  • High surge capability
  • High voltage capability
  • Internally insulated package
  • Internally isolated mounting base
  • Planar passivated for voltage ruggedness and reliability

BTA416Y-600C from other manufacturers

View BTA416Y-600C datasheet index

Brand Logo Part Number Description Other Manufacturers
WeEn Logo BTA416Y-600C 3Q Hi-Com Triac WeEn
INCHANGE Logo BTA416Y-600C Thyristor INCHANGE
WeEn Logo BTA416Y-600B 3Q Hi-Com Triac WeEn
NXP Semiconductors logo - Manufacturer

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BTA416Y-600C Distributor

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