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BTA416Y-800B Datasheet 3q Hi-com Triac

Manufacturer: NXP Semiconductors

Overview: BTA416Y-800B 3Q Hi- Triac 10 June 2014 Product data sheet 1.

General Description

Planar passivated high mutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.

This "series B" triac will mutate the full RMS current at the maximum rated junction temperature without the aid of a snubber.

This device has high Tj operating capability and an internally isolated mounting base.

Key Features

  • 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High surge capability High Tj(max) Isolated mounting base with 2500 V (RMS) isolation Least sensitive gate for highest noise immunity Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very high immunity to false.

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BTA416Y-800B Distributor