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BU1706AB - Silicon Diffused Power Transistor

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Description

High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.

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Part number BU1706AB
Manufacturer NXP
File Size 83.95 KB
Description Silicon Diffused Power Transistor
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 1.5 0.25 MAX. 1750 850 5 8 100 1.0 0.6 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 1.5 A; IB = 0.3 A ICM = 1.5 A; IB(on) = 0.
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