Datasheet4U Logo Datasheet4U.com

BU2507AX - Silicon Diffused Power Transistor

General Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.

Key Features

  • exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BU2507AX NPN Transistor INCHANGE
BU2507AF SILICON POWER TRANSISTOR SavantIC
BU2507AF NPN Transistor INCHANGE
BU2507DF NPN Transistor INCHANGE
BU2507DX NPN Transistor INCHANGE

Other Datasheets by NXP Semiconductors

Part Number Description
BU2507AF Silicon Diffused Power Transistor
BU2507DF Silicon Diffused Power Transistor
BU2507DX Silicon Diffused Power Transistor
BU2506DF Silicon Diffused Power Transistor
BU2506DX Silicon Diffused Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.