Datasheet4U Logo Datasheet4U.com

BU2523AF - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.

📥 Download Datasheet

Datasheet preview – BU2523AF

Datasheet Details

Part number BU2523AF
Manufacturer NXP
File Size 64.09 KB
Description Silicon Diffused Power Transistor
Datasheet download datasheet BU2523AF Datasheet
Additional preview pages of the BU2523AF datasheet.

📁 Similar Datasheet

  • BU2523AF - NPN Transistor (INCHANGE)
  • BU2523AX - NPN Transistor (INCHANGE)
  • BU2523DF - NPN Transistor (INCHANGE)
  • BU2520A - NPN Transistor (INCHANGE)
  • BU2520A - SILICON POWER TRANSISTOR (SavantIC)
  • BU2520AF - NPN Transistor (INCHANGE)
  • BU2520AF - SILICON POWER TRANSISTOR (SavantIC)
  • BU2520AW - NPN Transistor (INCHANGE)
  • BU2520AX - NPN Transistor (INCHANGE)
  • BU2520AX - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by NXP
  • BU2523AX - Silicon Diffused Power Transistor
  • BU2523DF - Silicon Diffused Power Transistor
  • BU2523DX - Silicon Diffused Power Transistor
  • BU2520A - Silicon Diffused Power Transistor
  • BU2520AF - Silicon Diffused Power Transistor
  • BU2520AW - Silicon Diffused Power Transistor
  • BU2520AX - Silicon Diffused Power Transistor
  • BU2520D - Silicon Diffused Power Transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 5.5 0.15 MAX. 1500 800 11 29 45 5.0 0.3 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 5.5 A; IB = 1.1 A f = 64 kHz ICsat = 5.
Published: |