BU2525DF Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Silicon Diffused Power Transistor GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 k Hz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 8.0 3.0 MAX. 1500 800 12 30 45 5.0 4.0 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.1 A PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 3 e LIMITING VALUES Limiting values in accordance with the...