BU2525DX Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Silicon Diffused Power Transistor GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 k Hz. QUICK REFERENCE DATA SYMBOL VCESM IC ICM Ptot VCEsat VCEO ICsat ts PARAMETER Collector-emitter voltage peak value Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector-emitter voltage (open base) Collector saturation current Storage time CONDITIONS VBE = 0 V Ths ≤ 25 ˚C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.1 A TYP. 8.0 3.0 MAX. 1500 12 30 45 5.0 800 4.0 UNIT V A A W V V A µs PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the...