• Part: BU2708DF
  • Description: Silicon Diffused Power Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 72.06 KB
Download BU2708DF Datasheet PDF
NXP Semiconductors
BU2708DF
BU2708DF is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
Philips Semiconductors Product specification Silicon Diffused Power Transistor GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a low worst case dissipation. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total...