• Part: BU2720AF
  • Description: Silicon Diffused Power Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 75.37 KB
Download BU2720AF Datasheet PDF
NXP Semiconductors
BU2720AF
BU2720AF is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
Philips Semiconductors Product specification Silicon Diffused Power Transistor GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 5.5 7.4 MAX. 1700 825 10 25 45 1.0 8.5...