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BU2722DF - Silicon Diffused Power Transistor

General Description

New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.

Intended for use in horizontal deflection circuits of high resolution monitors.

Suitable for operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V.

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Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2722DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 4.5 1.9 MAX. 1700 825 10 25 45 1 2.