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BU2725DX Datasheet Silicon Diffused Power Transistor

Manufacturer: NXP Semiconductors

Overview: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX.

General Description

High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.

Designed to withstand VCES pulses up to 1700V.

QUICK REFERENCE DATA SYMBOL VCESM IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V Ths ≤ 25 ˚C IC = 7.0 A;

BU2725DX Distributor