BU4507DZ Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Silicon Diffused Power Transistor GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4 1.7 300 MAX. 1500 800 8 15 32 3.0 2.1 400 UNIT V V A A W V A V ns Ths ≤ 25 ˚C IC = 4 A; IB = 1.0 A f = 16k Hz IF = 4 A ICsat = 4 A; f = 16k Hz PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the...