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BU4508AF - Silicon Diffused Power Transistor

General Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors.

Key Features

  • exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BU4508AF Silicon Diffused Power Transistor Product speciļ¬cation Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998 Philips Semiconductors Product speciļ¬cation Silicon Diffused Power Transistor BU4508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.