BU4515DX Datasheet | NXP Semiconductors

DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 6.0 t.b.f 1.7 t.b.f t.b.f MAX. 1500 800 9 20 45 3.0 2.0 t.b.f t.b.f UNIT V V A A W V A A V µs µs Ths ≤ 25 ˚C IC = 5.0 A; IB = 1.25 A f = 16k Hz f = 64k Hz IF = 6 A ICsat = 6A; f = 16k Hz f = 64k Hz PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 9 20 5 7.5 6 45 150 150 UNIT V V A A A A A W ˚C ˚C Ths ≤ 25 ˚C 1 Turn-off current. July 1998 Rev 1.000 Philips Semiconductors Objective specification Silicon Diffused Power Transistor THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink pound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified...