BU4550AL Datasheet | NXP Semiconductors

DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 TYP. 20 8 t.b.f t.b.f MAX. 1500 800 30 40 125 3.0 t.b.f t.b.f UNIT V V A A W V A A µs µs Tmb ≤ 25 ˚C IC = 20.0 A; IB = 5 A f = 32k Hz f = 130k Hz ICsat = 20 A; f = 32k Hz ICsat = 8 A; f = 130k Hz PINNING - SOT430 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 heat collector sink e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 25 40 10 15 10 125 150 150 UNIT V V A A A A A W ˚C ˚C Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 35 MAX. 1.0 UNIT K/W K/W 1 Turn-off current. January 1998 Rev 1.000 Philips Semiconductors Objective specification Silicon Diffused Power Transistor STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEsat VBEsat h FE h FE PARAMETER Collector cut-off current 2 Emitter...